名称 | 参数 |
---|---|
产品分类 | 航空航天可靠器件 |
封装 | UB |
一般描述 | Rad-Hard 50 V, 0.8 A NPN transistor |
市场状况 | Active |
I<sub>C</sub> | 0.8 |
Dc Current Gain | 100 |
Radiation Level | 100 krad |
Temperature range | -65 to 200 C |
Agency Generic Spec | MIL-PRF-19500/255 |
Transistor Polarity | NPN |
Agency Qualification | DLA |
Collector-Emitter Voltage | 40 |
J2N2222AUB1数据手册