IRS2008M产品参数_产品功能_原厂出售
是200 V 半桥栅极驱动器IC，它采用MLPQ 4 x 4 14L封装，具有关断输入、典型的0.29 A源电流和0.6 A灌电流，适用于MOSFET。您亦可订购SOIC-8封装版本：IRS2008S.
The IRS2008 is a 200 V level shift junction isolated MOSFET driver with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3 V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET in the high side configuration which operates up to 200 V. Propagation delays are matched to simplify the HVIC’s use in high frequency applications.IRS2005S/M: 200 V high-side and low-side gate driver IC with 680/150 ns propagation delay. Replace IRS2001S.
IRS2008M的特性
- 典型栅极电流I O+/ I O- 290 mA / 600 mA
- 栅极驱动器可为每个通道提供高达20V的电压
- VCC和VBS欠压锁定
- 3.3 V、5 V、15 V 输入逻辑兼容
- 可承受负瞬态电压
- 专门用于自举电源
- 防交叉传导逻辑
- 各通道都具有匹配的传播延时
- 内部设定的死区时间
- 高边输出与HIN输入同相
- 关断输入将关闭两个通道
- 工作温度范围：-40°C至125°C
- 2 kV HBM ESD
- 符合RoHS标准
IRS2008M优势
- 封装节省空间、物料清单成本降低、具有更简单设计和更低成本的更小PCB
- 异常操作保护、确保启动操作可靠
- 直观易用的设计
- 改进能效
- 快速可靠开关
IRS2008M规格参数
| 产品属性 | 属性值 |
|---|---|
| 渠道 | 2 |
| 配置 | Half Bridge |
| 输入电源电压 | 10 V 20 V |
| 隔离型 | Functional levelshift |
| 输出电流(吸收) | 0.6 A |
| 输出电流(源) | 0.29 A |
| 关闭传播延迟 | 150 ns |
| 打开传播延迟 | 680 ns |
| VBS UVLO(开) | 8.9 V |
| VBS UVLO(关闭) | 8.2 V |
| VCC UVLO(开) | 8.9 V |
| VCC UVLO(关闭) | 8.2 V |
| 电压等级 | 200 V |
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