| 名称 | 参数 |
|---|---|
| 产品分类 | 无分类 |
| 封装 | VFQFPN 9X9X1.0 31L PITCH 0.6MM |
| ECCN EU | NEC |
| ECCN US | EAR99 |
| Package Name | VFQFPN 9X9X1.0 31L PITCH 0.6MM |
| 一般描述 | High power density 600V Half bridge driver with two enhancement mode GaN HEMTs |
| 主要特性 | Bootstrap diode,Optimized for asymmetrical topologies |
| 包装类型 | Tray |
| 工作温度 | 125 |
| 市场状况 | Active |
| 等级规格 | Industrial |
| Supply Voltage | 11 |
| 温度最大值 | 125.0 |
| 温度最小值 | -40.0 |
| ROHS合规等级 | Ecopack2 |
| Number of Channels | 2 |
| Output Current-Max | 6.5 |
| Input configuration | HIN,LIN |
| Undervoltage lockout | 4.2 |
| Protection Option Type | Undervoltage lockout, Interlocking function, overtemperature |
MASTERGAN2数据手册
