| 名称 | 参数 |
|---|---|
| 产品分类 | 射频晶体管 |
| 封装 | D4E |
| ECCN EU | NEC |
| ECCN US | EAR99 |
| Frequency | 650 |
| Efficiency | 67 |
| Power Gain | 19.5 |
| Output Power | 650 |
| Package Name | D4E |
| 一般描述 | 650 W, 50 V, 0.4 to 1 GHz RF power LDMOS transistor |
| 包装类型 | Tray |
| 市场状况 | Active |
| 等级规格 | Industrial |
| R<sub>th</sub> | 0.16 |
| ROHS合规等级 | N/A |
| Transistor Supply Voltage | 50 |
RF5L08600CB4数据手册
